Invention Grant
US09136136B2 Method and structure for creating cavities with extreme aspect ratios
有权
用于创建具有极高宽比的腔体的方法和结构
- Patent Title: Method and structure for creating cavities with extreme aspect ratios
- Patent Title (中): 用于创建具有极高宽比的腔体的方法和结构
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Application No.: US14031694Application Date: 2013-09-19
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Publication No.: US09136136B2Publication Date: 2015-09-15
- Inventor: Thoralf Kautzsch , Heiko Fröhlich , Mirko Vogt , Maik Stegemann
- Applicant: Infineon Technologies Dresden GmbH
- Applicant Address: DE Dresden
- Assignee: Infineon Technologies Dresden GmbH
- Current Assignee: Infineon Technologies Dresden GmbH
- Current Assignee Address: DE Dresden
- Agency: Eschweiler & Associates, LLC
- Main IPC: H01L21/306
- IPC: H01L21/306 ; G01N33/487 ; G01N27/414 ; G01N27/447 ; H01L29/06

Abstract:
Embodiments relate to structures, systems and methods for more efficiently and effectively etching sacrificial and other layers in substrates and other structures. In embodiments, a substrate in which a sacrificial layer is to be removed to, e.g., form a cavity comprises an etch dispersion system comprising a trench, channel or other structure in which etch gas or another suitable gas, fluid or substance can flow to penetrate the substrate and remove the sacrificial layer. The trench, channel or other structure can be implemented along with openings or other apertures formed in the substrate, such as proximate one or more edges of the substrate, to even more quickly disperse etch gas or some other substance within the substrate.
Public/Granted literature
- US20150079787A1 METHOD AND STRUCTURE FOR CREATING CAVITIES WITH EXTREME ASPECT RATIOS Public/Granted day:2015-03-19
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