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公开(公告)号：US11078072B2
公开(公告)日：2021-08-03
申请号：US16861669
申请日：2020-04-29
发明人： Thoralf Kautzsch , Steffen Bieselt , Heiko Froehlich , Andre Roeth , Maik Stegemann , Mirko Vogt
摘要： A method for manufacturing a microelectromechanical systems (MEMS) device, includes forming a cavity in a bulk semiconductor substrate; defining a movably suspended mass in the bulk semiconductor substrate by one or more trenches extending from a main surface area of the bulk semiconductor substrate to the cavity; arranging a cap structure on the main surface area of the bulk semiconductor substrate; and forming a capacitive structure. Forming the capacitive structure includes arranging a first electrode structure on the movably suspended mass; and providing a second electrode structure at the cap structure such that the first electrode structure and the second electrode structure are spaced apart in a direction perpendicular to the main surface area of the bulk semiconductor substrate.
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公开(公告)号：US10544037B2
公开(公告)日：2020-01-28
申请号：US15875068
申请日：2018-01-19
发明人： Thoralf Kautzsch , Heiko Froehlich , Alessia Scire , Maik Stegemann , Bernhard Winkler , Andre Roeth , Steffen Bieselt , Mirko Vogt
摘要： The present disclosure relates to an integrated semiconductor device, comprising a semiconductor substrate; a cavity formed into the semiconductor substrate; a sensor portion of the semiconductor substrate deflectably suspended in the cavity at one side of the cavity via a suspension portion of the semiconductor substrate interconnecting the semiconductor substrate and the sensor portion thereof, wherein an extension of the suspension portion along the side of the cavity is smaller than an extension of said side of the cavity.
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公开(公告)号：US20180155188A1
公开(公告)日：2018-06-07
申请号：US15875068
申请日：2018-01-19
发明人： Thoralf Kautzsch , Heiko Froehlich , Alessia Scire , Maik Stegemann , Bernhard Winkler , Andre Roeth , Steffen Bieselt , Mirko Vogt
CPC分类号： B81C1/0015 , B81B3/0078 , B81B2201/0235 , B81B2203/0118 , B81B2203/0163
摘要： The present disclosure relates to an integrated semiconductor device, comprising a semiconductor substrate; a cavity formed into the semiconductor substrate; a sensor portion of the semiconductor substrate deflectably suspended in the cavity at one side of the cavity via a suspension portion of the semiconductor substrate interconnecting the semiconductor substrate and the sensor portion thereof, wherein an extension of the suspension portion along the side of the cavity is smaller than an extension of said side of the cavity.
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公开(公告)号：US20180017456A1
公开(公告)日：2018-01-18
申请号：US15647360
申请日：2017-07-12
发明人： Thoralf Kautzsch , Heiko Froehlich , Marco Haubold , Andre Roeth , Maik Stegemann , Mirko Vogt
IPC分类号： G01L9/00
CPC分类号： G01L9/0042 , G01L9/0045 , G01L9/0048 , G01L9/0054 , G01L9/0073 , G01L19/0618
摘要： A manufacturing method includes providing a semiconductor substrate having a pressure sensor structure; and forming, during a BEOL process (BEOL=back-end-of-line), a metal-insulator-stack arrangement on the semiconductor substrate, wherein the metal-insulator-stack arrangement is formed to comprise (1) a cavity adjacent to the pressure sensor structure and extending over the pressure sensor structure, and (2) a pressure port through the metal-insulator-stack arrangement for providing a fluidic connection between the cavity and an environmental atmosphere, wherein the pressure port has a cross-sectional area, which is smaller than 10% of a footprint area of the pressure sensor structure within the cavity.
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公开(公告)号：US09209778B2
公开(公告)日：2015-12-08
申请号：US13834486
申请日：2013-03-15
发明人： Thoralf Kautzsch , Heiko Froehlich , Mirko Vogt , Maik Stegemann , Thomas Santa , Markus Burian
CPC分类号： H03H9/2452 , B81B3/0078 , B81B2201/0271 , B81C1/00158 , B81C1/00246 , B81C1/00301 , B81C1/00396 , B81C2203/0145 , H03H3/0072 , H03H3/0073 , H03H9/02259 , H03H9/2463 , H03H2009/02291 , H03H2009/02307 , H03H2009/0233 , H03H2009/02496
摘要： Embodiments relate to MEMS resonator structures and methods that enable application of a maximum available on-chip voltage. In an embodiment, a MEMS resonator comprises a connection between a ground potential and the gap electrode of the resonator. Embodiments also relate to manufacturing systems and methods that are less complex and enable production of MEMS resonators of reduced dimensions.
摘要翻译： 实施例涉及能够应用最大可用片上电压的MEMS谐振器结构和方法。 在一个实施例中，MEMS谐振器包括接地电位和谐振器的间隙电极之间的连接。 实施例还涉及不太复杂的制造系统和方法，并且能够制造尺寸减小的MEMS谐振器。
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公开(公告)号：US10700221B2
公开(公告)日：2020-06-30
申请号：US16165556
申请日：2018-10-19
发明人： Ines Uhlig , Anjo Kirschner , Dirk Offenberg , Beatrice Poetschick , Bjoern Sausner , Thomas Schmitz-Huebsch , Mirko Vogt
IPC分类号： H01L27/146 , H01L31/0216 , H01L31/0232 , H01L31/18
摘要： An apparatus and a method for producing the apparatus are described, wherein the apparatus includes a substrate with a photodetector and a dielectric arranged on the substrate. Further, the apparatus includes a microlens arranged on a first side of the dielectric. The microlens is configured to steer incident radiation onto the photodetector. Moreover, the apparatus includes a carrier-free optical interference filter. The microlens is arranged between the photodetector and the interference filter, and the interference filter has a plane surface on a side facing away from the photodetector.
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公开(公告)号：US10683203B2
公开(公告)日：2020-06-16
申请号：US15951489
申请日：2018-04-12
发明人： Thoralf Kautzsch , Steffen Bieselt , Heiko Froehlich , Andre Roeth , Maik Stegemann , Mirko Vogt
摘要： A microelectromechanical systems (MEMS) device is provided and includes a bulk semiconductor substrate, a cavity formed in the bulk semiconductor substrate, a movably suspended mass, a cap structure and a capacitive structure is shown. The movably suspended mass is defined in the bulk semiconductor substrate by one or more trenches extending from a main surface area of the bulk semiconductor substrate to the cavity. The cap is structure arranged on the main surface area of the bulk semiconductor substrate. The capacitive structure comprises a first electrode structure arranged on the movably suspended mass and a second electrode structure arranged at the cap structure such that the first electrode structure and the second electrode structure are spaced apart in a direction perpendicular to the main surface area of the bulk semiconductor substrate.
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公开(公告)号：US20190123217A1
公开(公告)日：2019-04-25
申请号：US16165556
申请日：2018-10-19
发明人： Ines Uhlig , Anjo Kirschner , Dirk Offenberg , Beatrice Poetschick , Bjoern Sausner , Thomas Schmitz-Huebsch , Mirko Vogt
IPC分类号： H01L31/0216 , H01L31/0232 , H01L31/18
CPC分类号： H01L31/02165 , H01L27/1462 , H01L27/14627 , H01L27/14685 , H01L31/02327 , H01L31/18
摘要： An apparatus and a method for producing the apparatus are described, wherein the apparatus includes a substrate with a photodetector and a dielectric arranged on the substrate. Further, the apparatus includes a microlens arranged on a first side of the dielectric. The microlens is configured to steer incident radiation onto the photodetector. Moreover, the apparatus includes a carrier-free optical interference filter. The microlens is arranged between the photodetector and the interference filter, and the interference filter has a plane surface on a side facing away from the photodetector.
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公开(公告)号：US09896329B2
公开(公告)日：2018-02-20
申请号：US15208975
申请日：2016-07-13
发明人： Thoralf Kautzsch , Heiko Froehlich , Alessia Scire , Maik Stegemann , Bernhard Winkler , Andre Roeth , Steffen Bieselt , Mirko Vogt
CPC分类号： B81C1/0015 , B81B3/0078 , B81B2201/0235 , B81B2203/0118 , B81B2203/0163
摘要： The present disclosure relates to an integrated semiconductor device, comprising a semiconductor substrate; a cavity formed into the semiconductor substrate; a sensor portion of the semiconductor substrate deflectably suspended in the cavity at one side of the cavity via a suspension portion of the semiconductor substrate interconnecting the semiconductor substrate and the sensor portion thereof, wherein an extension of the suspension portion along the side of the cavity is smaller than an extension of said side of the cavity.
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公开(公告)号：US09641153B2
公开(公告)日：2017-05-02
申请号：US14932303
申请日：2015-11-04
发明人： Thoralf Kautzsch , Heiko Froehlich , Mirko Vogt , Maik Stegemann , Thomas Santa , Markus Burian
CPC分类号： H03H9/2452 , B81B3/0078 , B81B2201/0271 , B81C1/00158 , B81C1/00246 , B81C1/00301 , B81C1/00396 , B81C2203/0145 , H03H3/0072 , H03H3/0073 , H03H9/02259 , H03H9/2463 , H03H2009/02291 , H03H2009/02307 , H03H2009/0233 , H03H2009/02496
摘要： A method of forming a resonator by providing a first layer; forming a sacrificial layer on the first layer; forming a capping layer on the sacrificial layer; forming at least one etching aperture in the capping layer; forming at least one additional aperture having a different size than the at least one etching aperture; forming a cavity and releasing a resonator structure within the cavity by removing the sacrificial layer by etching via the at least one etching aperture; sealing the at least one etching aperture; and forming a lining in the at least one additional aperture.
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