Invention Grant
- Patent Title: Method of adjusting a threshold voltage of a transistor in the forming of a semiconductor device including the transistor
- Patent Title (中): 在形成包括晶体管的半导体器件时调整晶体管的阈值电压的方法
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Application No.: US13940545Application Date: 2013-07-12
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Publication No.: US09136187B2Publication Date: 2015-09-15
- Inventor: Cheong Sik Yu , Choelhwyi Bae , JaeHoo Park , Knut Stahrenberg
- Applicant: SAMSUNG ELECTRONICS CO., LTD. , INFINEON TECHNOLOGIES AG
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: F. Chau & Associates, LLC
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L21/66
Abstract:
A method of forming a semiconductor device includes forming a first transistor and a second transistor on a substrate, monitoring processes of forming the first and second transistors to find an error and performing an additional ion implantation process to form a low-concentration dopant region or a halo region on the first transistor or the second transistor corresponding to a found error.
Public/Granted literature
- US20150017746A1 METHODS OF FORMING A SEMICONDUCTOR DEVICE Public/Granted day:2015-01-15
Information query
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