Invention Grant
- Patent Title: Memories and methods of forming thin-film transistors using hydrogen plasma doping
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Application No.: US14599886Application Date: 2015-01-19
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Publication No.: US09136282B2Publication Date: 2015-09-15
- Inventor: Shu Qin , Haitao Liu , Zhenyu Lu
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Schwegman Lundberg & Woessner, P.A.
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L21/84 ; H01L27/12 ; H01L27/115 ; H01L29/04 ; H01L29/16 ; H01L21/02 ; H01L21/223 ; H01L21/324 ; H01L21/285
Abstract:
Methods of forming thin-film transistors and memories are disclosed. In one such method, polycrystalline silicon is hydrogen plasma doped to form doped polycrystalline silicon. The doped polycrystalline silicon is then annealed. The hydrogen plasma doping and the annealing are decoupled.
Public/Granted literature
- US20150206906A1 MEMORIES AND METHODS OF FORMING THIN-FILM TRANSISTORS USING HYDROGEN PLASMA DOPING Public/Granted day:2015-07-23
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