发明授权
- 专利标题： Semiconductor device
- 专利标题（中）： 半导体器件
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申请号： US13549867申请日： 2012-07-16
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公开(公告)号： US09136388B2公开(公告)日： 2015-09-15
- 发明人: Shunpei Yamazaki , Masahiro Takahashi , Tatsuya Honda , Takehisa Hatano
- 申请人： Shunpei Yamazaki , Masahiro Takahashi , Tatsuya Honda , Takehisa Hatano
- 申请人地址： JP Atsugi-shi, Kanagawa-ken
- 专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人地址： JP Atsugi-shi, Kanagawa-ken
- 代理机构： Robinson Intellectual Property Law Office, P.C.
- 代理商 Eric J. Robinson
- 优先权： JP2011-161383 20110722
- 主分类号： H01L29/26
- IPC分类号： H01L29/26 ; H01L29/786
摘要：
Provided is a structure of a transistor, which enables a so-called normally-off switching element, and a manufacturing method thereof. Provided is a structure of a semiconductor device which achieves high-speed response and high-speed operation by improving on characteristics of a transistor, and a manufacturing method thereof. Provided is a highly reliable semiconductor device. In the transistor in which a semiconductor layer, source and drain electrode layers, a gate insulating layer, and a gate electrode layer are stacked in that order. As the semiconductor layer, an oxide semiconductor layer which contains at least four kinds of elements of indium, gallium, zinc, and oxygen, and has a composition ratio (atomic percentage) of indium as twice or more as a composition ratio of gallium and a composition ratio of zinc, is used.
公开/授权文献
- US20130020571A1 SEMICONDUCTOR DEVICE 公开/授权日：2013-01-24
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