Invention Grant
US09136473B2 Semiconductor device with PCM memory cells and nanotubes and related methods
有权
具有PCM存储单元和纳米管的半导体器件及相关方法
- Patent Title: Semiconductor device with PCM memory cells and nanotubes and related methods
- Patent Title (中): 具有PCM存储单元和纳米管的半导体器件及相关方法
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Application No.: US13852050Application Date: 2013-03-28
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Publication No.: US09136473B2Publication Date: 2015-09-15
- Inventor: John H. Zhang
- Applicant: STMICROELECTRONICS, INC.
- Applicant Address: US TX Coppell
- Assignee: STMICROELECTRONICS, INC.
- Current Assignee: STMICROELECTRONICS, INC.
- Current Assignee Address: US TX Coppell
- Agency: Allen, Dyer, Doppelt, Milbrath & Gilchrist, P.A.
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L45/00 ; B82Y10/00 ; G11C13/00 ; H01L27/24 ; G11C13/02
Abstract:
A semiconductor device may include a substrate, and an array of PCM memory cells above the substrate. Each PCM memory cell may include first and second vertically aligned electrodes, a first dielectric layer between the first and second electrodes, a carbon nanotube extending vertically through the first dielectric layer from the second electrode and toward the first electrode, and a PCM body between the first electrode and the at least one carbon nanotube.
Public/Granted literature
- US20140293687A1 SEMICONDUCTOR DEVICE WITH PCM MEMORY CELLS AND NANOTUBES AND RELATED METHODS Public/Granted day:2014-10-02
Information query
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