Invention Grant
US09136473B2 Semiconductor device with PCM memory cells and nanotubes and related methods 有权
具有PCM存储单元和纳米管的半导体器件及相关方法

Semiconductor device with PCM memory cells and nanotubes and related methods
Abstract:
A semiconductor device may include a substrate, and an array of PCM memory cells above the substrate. Each PCM memory cell may include first and second vertically aligned electrodes, a first dielectric layer between the first and second electrodes, a carbon nanotube extending vertically through the first dielectric layer from the second electrode and toward the first electrode, and a PCM body between the first electrode and the at least one carbon nanotube.
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