Invention Grant
- Patent Title: Structure and method for the fabrication of a gallium nitride vertical cavity surface emitting laser
- Patent Title (中): 用于制造氮化镓垂直腔表面发射激光器的结构和方法
-
Application No.: US13947755Application Date: 2013-07-22
-
Publication No.: US09136673B2Publication Date: 2015-09-15
- Inventor: Casey O. Holder , Daniel F. Feezell , Steven P. DenBaars , James S. Speck , Shuji Nakamura
- Applicant: The Regents of the University of California
- Applicant Address: US CA Oakland
- Assignee: The Regents of the University of California
- Current Assignee: The Regents of the University of California
- Current Assignee Address: US CA Oakland
- Agency: Gates & Cooper LLP
- Main IPC: H01S5/00
- IPC: H01S5/00 ; H01S5/10 ; H01S5/183 ; H01S5/343 ; B82Y20/00 ; H01S5/02 ; H01S5/042 ; H01S5/20 ; H01S5/32 ; H01S5/42
Abstract:
A III-Nitride based Vertical Cavity Surface Emitting Laser (VCSEL), wherein a cavity length of the VCSEL is controlled by etching.
Public/Granted literature
- US20140023102A1 STRUCTURE AND METHOD FOR THE FABRICATION OF A GALLIUM NITRIDE VERTICAL CAVITY SURFACE EMITTING LASER Public/Granted day:2014-01-23
Information query
