Invention Grant
US09136872B2 Memory, memory system, and error checking and correcting method for memory
有权
内存,内存系统和内存的错误检查和纠正方法
- Patent Title: Memory, memory system, and error checking and correcting method for memory
- Patent Title (中): 内存,内存系统和内存的错误检查和纠正方法
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Application No.: US13648421Application Date: 2012-10-10
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Publication No.: US09136872B2Publication Date: 2015-09-15
- Inventor: Eun-chu Oh , Jae-hong Kim , Jun-jin Kong
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Gyeonngi-Do
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Gyeonngi-Do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2012-0009207 20120130
- Main IPC: G06F11/00
- IPC: G06F11/00 ; H03M13/05 ; H03M13/35 ; H03M13/37 ; H03M13/11

Abstract:
A memory system includes an error checking and correction (ECC) engine configured to perform error checking and correction of data temporarily stored in a first memory array and data read out from the first memory array according to a first method, and perform error checking and correction of data stored in a second memory array after read out from the first memory array and data read out from the second memory array according to a second method, wherein the first method and the second method are selected in response to a control signal having at least a first logic level, and the second method checks and corrects data errors occurring at a higher rate compared the first method.
Public/Granted literature
- US20130198577A1 MEMORY, MEMORY SYSTEM, AND ERROR CHECKING AND CORRECTING METHOD FOR MEMORY Public/Granted day:2013-08-01
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