Invention Grant
- Patent Title: Method for chemical vapor deposition control
- Patent Title (中): 化学气相沉积控制方法
-
Application No.: US12814301Application Date: 2010-06-11
-
Publication No.: US09139910B2Publication Date: 2015-09-22
- Inventor: Eric M. Lee , Jacques Faguet , Eric J. Strang
- Applicant: Eric M. Lee , Jacques Faguet , Eric J. Strang
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Agency: Wood, Herron & Evans, LLP
- Main IPC: C23C16/52
- IPC: C23C16/52 ; C23C16/44 ; C23C16/455 ; C23C16/46

Abstract:
A method of depositing a thin film on a substrate in a deposition system is described. The method includes disposing a gas heating device comprising a plurality of heating element zones in a deposition system, and independently controlling a temperature of each of the plurality of heating element zones, wherein each of the plurality of heating element zones having one or more resistive heating elements. Additionally, the method includes providing a substrate on a substrate holder in the deposition system, wherein the substrate holder has one or more temperature control zones. The method further includes providing a film forming composition to the gas heating device coupled to the deposition system, pyrolyzing one or more constituents of the film forming composition using the gas heating device, and introducing the film forming composition to the substrate in the deposition system to deposit a thin film on the substrate.
Public/Granted literature
- US20110305831A1 Method for chemical vapor deposition control Public/Granted day:2011-12-15
Information query
IPC分类: