Invention Grant
US09142286B2 Integrated circuit memory device with read-disturb control 有权
具有读干扰控制的集成电路存储器件

Integrated circuit memory device with read-disturb control
Abstract:
A device (e.g., an integrated circuit memory device such as a static random access memory device) includes word line drivers. Each of the word line drivers includes a pull-up device that is coupled to a node via a shared line. A precharge device is coupled between a power supply and the node. The precharge device and a pull-up device for a selected word line driver are controlled to allow the power supply to charge the node and then to allow the charge stored in the node to flow into a word line corresponding to the selected word line driver.
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