Invention Grant
- Patent Title: Integrated circuit memory device with read-disturb control
- Patent Title (中): 具有读干扰控制的集成电路存储器件
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Application No.: US13863208Application Date: 2013-04-15
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Publication No.: US09142286B2Publication Date: 2015-09-22
- Inventor: Jason T Su , Jitendra Khare
- Applicant: Applied Micro Circuits Corporation
- Applicant Address: US CA Sunnyvale
- Assignee: Applied Micro Circuits Corporation
- Current Assignee: Applied Micro Circuits Corporation
- Current Assignee Address: US CA Sunnyvale
- Main IPC: G11C8/00
- IPC: G11C8/00 ; G11C11/419 ; G11C7/02 ; G11C8/08 ; G11C11/418

Abstract:
A device (e.g., an integrated circuit memory device such as a static random access memory device) includes word line drivers. Each of the word line drivers includes a pull-up device that is coupled to a node via a shared line. A precharge device is coupled between a power supply and the node. The precharge device and a pull-up device for a selected word line driver are controlled to allow the power supply to charge the node and then to allow the charge stored in the node to flow into a word line corresponding to the selected word line driver.
Public/Granted literature
- US20140307500A1 INTEGRATED CIRCUIT MEMORY DEVICE WITH READ-DISTURB CONTROL Public/Granted day:2014-10-16
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