Integrated circuit memory device with read-disturb control
    1.
    发明授权
    Integrated circuit memory device with read-disturb control 有权
    具有读干扰控制的集成电路存储器件

    公开(公告)号:US09142286B2

    公开(公告)日:2015-09-22

    申请号:US13863208

    申请日:2013-04-15

    CPC classification number: G11C11/419 G11C7/02 G11C8/08 G11C11/418

    Abstract: A device (e.g., an integrated circuit memory device such as a static random access memory device) includes word line drivers. Each of the word line drivers includes a pull-up device that is coupled to a node via a shared line. A precharge device is coupled between a power supply and the node. The precharge device and a pull-up device for a selected word line driver are controlled to allow the power supply to charge the node and then to allow the charge stored in the node to flow into a word line corresponding to the selected word line driver.

    Abstract translation: 装置(例如,诸如静态随机存取存储装置的集成电路存储装置)包括字线驱动器。 每个字线驱动器包括经由共享线耦合到节点的上拉设备。 预充电装置耦合在电源和节点之间。 控制用于所选字线驱动器的预充电装置和上拉装置,以允许电源为节点充电,然后允许存储在节点中的电荷流入对应于所选字线驱动器的字线。

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