Invention Grant
- Patent Title: Method for controlling the breakdown of an antifuse memory cell
- Patent Title (中): 用于控制反熔丝存储单元的击穿的方法
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Application No.: US13887167Application Date: 2013-05-03
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Publication No.: US09142318B2Publication Date: 2015-09-22
- Inventor: Philippe Candelier , Joel Damiens , Elise Leroux
- Applicant: STMicroelectronics SA
- Applicant Address: FR Montrouge
- Assignee: STMicroelectronics SA
- Current Assignee: STMicroelectronics SA
- Current Assignee Address: FR Montrouge
- Agency: Seed IP Law Group PLLC
- Priority: FR1254049 20120503
- Main IPC: G11C17/16
- IPC: G11C17/16 ; G11C17/18 ; H01L27/112 ; H01L27/10
Abstract:
A method for controlling the breakdown of an antifuse memory cell formed on a semiconductor substrate, including the steps of: applying a programming voltage; detecting a breakdown time; and interrupting the application of the programming voltage at a time following the breakdown time by a post-breakdown time.
Public/Granted literature
- US20130294142A1 METHOD FOR CONTROLLING THE BREAKDOWN OF AN ANTIFUSE MEMORY CELL Public/Granted day:2013-11-07
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