公开(公告)号：US09142318B2

公开(公告)日：2015-09-22

申请号：US13887167

申请日：2013-05-03

Applicant: STMicroelectronics SA

Inventor： Philippe Candelier ,  Joel Damiens ,  Elise Leroux

IPC: G11C17/16 ,  G11C17/18 ,  H01L27/112 ,  H01L27/10

CPC classification number: G11C17/165 ,  G11C17/18 ,  H01L27/101 ,  H01L27/11206

Abstract: A method for controlling the breakdown of an antifuse memory cell formed on a semiconductor substrate, including the steps of: applying a programming voltage; detecting a breakdown time; and interrupting the application of the programming voltage at a time following the breakdown time by a post-breakdown time.

Abstract translation: 一种用于控制形成在半导体衬底上的反熔层存储单元击穿的方法，包括以下步骤：施加编程电压; 检测故障时间; 并且在故障时间之后的故障时间之后中断施加编程电压。

公开(公告)号：US20130294142A1

公开(公告)日：2013-11-07

申请号：US13887167

申请日：2013-05-03

Applicant: STMICROELECTRONICS SA

Inventor： Philippe Candelier ,  Joel Damiens ,  Elise Leroux

IPC: G11C17/16

CPC classification number: G11C17/165 ,  G11C17/18 ,  H01L27/101 ,  H01L27/11206

Abstract: A method for controlling the breakdown of an antifuse memory cell formed on a semiconductor substrate, including the steps of: applying a programming voltage; detecting a breakdown time; and interrupting the application of the programming voltage at a time following the breakdown time by a post-breakdown time.