Invention Grant
- Patent Title: Method of making a heteroepitaxial layer on a seed area
- Patent Title (中): 在种子区域上制造异质外延层的方法
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Application No.: US13944808Application Date: 2013-07-17
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Publication No.: US09142400B1Publication Date: 2015-09-22
- Inventor: Steven R. J. Brueck , Stephen D. Hersee , Seung-Chang Lee , Daniel Feezell
- Applicant: STC.UNM
- Applicant Address: US NM Albuquerque
- Assignee: STC.UNM
- Current Assignee: STC.UNM
- Current Assignee Address: US NM Albuquerque
- Agency: MH2 Technology Law Group, LLP
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L21/02 ; H01L27/12
Abstract:
A method for making a heteroepitaxial layer. The method comprises providing a semiconductor substrate. A seed area delineated with a selective growth mask is formed on the semiconductor substrate. The seed area comprises a first material and has a linear surface dimension of less than 100 nm. A heteroepitaxial layer is grown on the seed area, the heteroepitaxial layer comprising a second material that is different from the first material. Devices made by the method are also disclosed.
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