发明授权
US09142407B2 Semiconductor structure having sets of III-V compound layers and method of forming the same
有权
具有III-V族化合物层的半导体结构及其形成方法
- 专利标题： Semiconductor structure having sets of III-V compound layers and method of forming the same
- 专利标题（中）： 具有III-V族化合物层的半导体结构及其形成方法
-
申请号： US13743045申请日： 2013-01-16
-
公开(公告)号： US09142407B2公开(公告)日： 2015-09-22
- 发明人: Chi-Ming Chen , Po-Chun Liu , Chung-Yi Yu , Chia-Shiung Tsai
- 申请人： Chi-Ming Chen , Po-Chun Liu , Chung-Yi Yu , Chia-Shiung Tsai
- 申请人地址： TW
- 专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人地址： TW
- 代理机构： Lowe Hauptman & Ham, LLP
- 主分类号： H01L29/66
- IPC分类号： H01L29/66 ; H01L21/02 ; H01L29/778 ; H01L29/15 ; H01L29/20
摘要：
A semiconductor structure includes a substrate, a first III-V compound layer over the substrate, one or more sets of III-V compound layers over the first III-V compound layer, a second III-V compound layer over the one or more sets of III-V compound layers, and an active layer over the second III-V compound layer. The first III-V compound layer has a first type doping. Each of the one or more sets of III-V compound layers includes a lower III-V compound layer and an upper III-V compound layer over the lower III-V compound layer. The upper III-V compound layer having the first type doping, and the lower III-V compound layer is at least one of undoped, unintentionally doped having a second type doping, or doped having the second type doping. The second III-V compound layer is either undoped or unintentionally doped having the second type doping.