Invention Grant
US09142427B2 Methods of making an interposer structure with embedded capacitor structure
有权
制作具有嵌入式电容器结构的插入式结构的方法
- Patent Title: Methods of making an interposer structure with embedded capacitor structure
- Patent Title (中): 制作具有嵌入式电容器结构的插入式结构的方法
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Application No.: US14180567Application Date: 2014-02-14
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Publication No.: US09142427B2Publication Date: 2015-09-22
- Inventor: Chin Hui Chong , David J. Corisis , Choon Kuan Lee
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Perkins Coie LLP
- Main IPC: H01L29/00
- IPC: H01L29/00 ; H01L21/4763 ; H01L21/48 ; H01L23/50 ; H01L23/00 ; H01L49/02
Abstract:
A device is disclosed which includes an interposer, at least one capacitor formed at least partially within an opening formed in the interposer and an integrated circuit that is operatively coupled to the interposer. A method is disclosed which includes obtaining an interposer having at least one capacitor formed at least partially within an opening in the interposer and operatively coupling an integrated circuit to the interposer. A method is also disclosed which includes obtaining an interposer comprising a dielectric material, forming an opening in the interposer and forming a capacitor that is positioned at least partially within the opening.
Public/Granted literature
- US20140162412A1 METHODS OF MAKING AN INTERPOSER STRUCTURE WITH EMBEDDED CAPACITOR STRUCTURE Public/Granted day:2014-06-12
Information query
IPC分类:
