Invention Grant
- Patent Title: Semiconductor device having inductor
- Patent Title (中): 具有电感器的半导体器件
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Application No.: US14076419Application Date: 2013-11-11
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Publication No.: US09142541B2Publication Date: 2015-09-22
- Inventor: Sheng-Yuan Lee
- Applicant: VIA TECHNOLOGIES, INC.
- Applicant Address: TW New Taipei
- Assignee: VIA TECHNOLOGIES, INC.
- Current Assignee: VIA TECHNOLOGIES, INC.
- Current Assignee Address: TW New Taipei
- Agency: McClure, Qualey & Rodack, LLP
- Priority: TW102124858A 20130711
- Main IPC: H01L27/02
- IPC: H01L27/02 ; H01L23/522

Abstract:
A semiconductor device including a first insulating layer and a second insulating layer sequentially disposed on a substrate is disclosed. A first conductive line and a second conductive line are disposed in the first insulating layer, and each of the first and second conductive lines has a first end and a second end, wherein the second ends of the first and second conductive lines are coupled to each other. A first winding portion and a second winding portion are disposed in the second insulating layer, and each of the first and second winding portions includes a third conductive line and a fourth conductive line arranged from the inside to the outside. Each of the third and fourth conductive lines has a first end and a second end, wherein the first and second conductive lines overlap at least a portion of the third conductive lines.
Public/Granted literature
- US20140210044A1 SEMICONDUCTOR DEVICE HAVING INDUCTOR Public/Granted day:2014-07-31
Information query
IPC分类: