Invention Grant
- Patent Title: Electrostatic discharge protection structure capable of preventing latch-up issue caused by unexpected noise
- Patent Title (中): 静电放电保护结构能够防止由意外的噪音引起的闩锁问题
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Application No.: US14181740Application Date: 2014-02-17
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Publication No.: US09142545B2Publication Date: 2015-09-22
- Inventor: Yi-Chun Chen , Li-Cih Wang , Lu-An Chen , Tien-Hao Tang
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Science-Based Industrial Park, Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Science-Based Industrial Park, Hsin-Chu
- Agent Winston Hsu; Scott Margo
- Main IPC: H01L27/02
- IPC: H01L27/02 ; H01L27/06

Abstract:
The electrostatic discharge protection structure includes an N-well disposed on a substrate, a P-well disposed on the substrate and adjacent to the N-well, a first doped region of N-type conductivity disposed in the N-well, a second doped region of N-type conductivity disposed in the N-well, a third doped region of P-type conductivity disposed in the N-well, a fifth doped region of P-type conductivity disposed in the P-well, a fourth doped region of N-type conductivity disposed between the third doped region and the fifth doped region in the P-well, an anode electrically connected to the first doped region and the second doped region, and a cathode electrically connected to the fourth doped region and the fifth doped region.
Public/Granted literature
Information query
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