Invention Grant
US09142545B2 Electrostatic discharge protection structure capable of preventing latch-up issue caused by unexpected noise 有权
静电放电保护结构能够防止由意外的噪音引起的闩锁问题

Electrostatic discharge protection structure capable of preventing latch-up issue caused by unexpected noise
Abstract:
The electrostatic discharge protection structure includes an N-well disposed on a substrate, a P-well disposed on the substrate and adjacent to the N-well, a first doped region of N-type conductivity disposed in the N-well, a second doped region of N-type conductivity disposed in the N-well, a third doped region of P-type conductivity disposed in the N-well, a fifth doped region of P-type conductivity disposed in the P-well, a fourth doped region of N-type conductivity disposed between the third doped region and the fifth doped region in the P-well, an anode electrically connected to the first doped region and the second doped region, and a cathode electrically connected to the fourth doped region and the fifth doped region.
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