发明授权
- 专利标题： FinFET compatible capacitor circuit
- 专利标题（中）： FinFET兼容电容电路
-
申请号： US13602714申请日： 2012-09-04
-
公开(公告)号： US09142548B2公开(公告)日： 2015-09-22
- 发明人: Rongtian Zhang , Lew G. Chua-Eoan , Shiqun Gu
- 申请人： Rongtian Zhang , Lew G. Chua-Eoan , Shiqun Gu
- 申请人地址： US CA San Diego
- 专利权人： QUALCOMM Incorporated
- 当前专利权人： QUALCOMM Incorporated
- 当前专利权人地址： US CA San Diego
- 代理商 Donald D. Min
- 主分类号： H01L27/108
- IPC分类号： H01L27/108 ; H01L27/06 ; H01L29/66 ; H01L21/84 ; H01L27/12 ; H01L27/13 ; H01L49/02 ; H01L21/8234
摘要：
A capacitor includes a semiconductor substrate. The capacitor also includes a first terminal having a fin disposed on a surface of the semiconductor substrate. The capacitor further includes a dielectric layer disposed onto the fin. The capacitor still further includes a second terminal having a FinFET compatible high-K metal gate disposed proximate and adjacent to the fin.
公开/授权文献
- US20140061744A1 FinFET CIRCUIT 公开/授权日：2014-03-06