Invention Grant
- Patent Title: Semiconductor device and method for fabricating the same
- Patent Title (中): 半导体装置及其制造方法
-
Application No.: US14079222Application Date: 2013-11-13
-
Publication No.: US09142644B2Publication Date: 2015-09-22
- Inventor: Jong Seok Lee , Kyoung-Kook Hong , Dae Hwan Chun , Youngkyun Jung
- Applicant: Hyundai Motor Company
- Applicant Address: KR Seoul
- Assignee: HYUNDAI MOTOR COMPANY
- Current Assignee: HYUNDAI MOTOR COMPANY
- Current Assignee Address: KR Seoul
- Agency: McDermott Will & Emery LLP
- Priority: KR10-2012-0157508 20121228
- Main IPC: H01L29/772
- IPC: H01L29/772 ; H01L29/66 ; H01L29/06 ; H01L29/78 ; H01L29/423
Abstract:
The present inventive concept has been made in an effort to increase the width of a channel in a silicon carbide MOSFET using a trench gate.According to the exemplary embodiment of the present inventive concept, the width of a channel can be increased, compared with the conventional art, by forming a plurality of protrusions extending to the p type epitaxial layer on both sides of the trench.
Public/Granted literature
- US20140183556A1 SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME Public/Granted day:2014-07-03
Information query
IPC分类:
