Invention Grant
US09144147B2 Semiconductor processing system and methods using capacitively coupled plasma
有权
半导体处理系统和使用电容耦合等离子体的方法
- Patent Title: Semiconductor processing system and methods using capacitively coupled plasma
- Patent Title (中): 半导体处理系统和使用电容耦合等离子体的方法
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Application No.: US13773067Application Date: 2013-02-21
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Publication No.: US09144147B2Publication Date: 2015-09-22
- Inventor: Jang-Gyoo Yang , Matthew L. Miller , Xinglong Chen , Kien N. Chuc , Qiwei Liang , Shankar Venkataraman , Dmitry Lubomirsky
- Applicant: Applied Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Kilpatrick Townsend & Stockton LLP
- Main IPC: C23C16/00
- IPC: C23C16/00 ; C23F1/00 ; H01L21/306 ; H01J37/32 ; H05H1/24 ; C23C16/455
Abstract:
Substrate processing systems are described that have a capacitively coupled plasma (CCP) unit positioned inside a process chamber. The CCP unit may include a plasma excitation region formed between a first electrode and a second electrode. The first electrode may include a first plurality of openings to permit a first gas to enter the plasma excitation region, and the second electrode may include a second plurality of openings to permit an activated gas to exit the plasma excitation region. The system may further include a gas inlet for supplying the first gas to the first electrode of the CCP unit, and a pedestal that is operable to support a substrate. The pedestal is positioned below a gas reaction region into which the activated gas travels from the CCP unit.
Public/Granted literature
- US20130153148A1 SEMICONDUCTOR PROCESSING SYSTEM AND METHODS USING CAPACITIVELY COUPLED PLASMA Public/Granted day:2013-06-20
Information query
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