Invention Grant
US09147028B2 Forming modified cell architecture for finFET technology and resulting device 有权
形成用于finFET技术和结果器件的改进的电池架构

Forming modified cell architecture for finFET technology and resulting device
Abstract:
Methods for accommodating a non-integer multiple of the M2 pitch for the cell height of a semiconductor cell and the resulting devices are disclosed. Embodiments may include forming a cell within an integrated circuit (IC) with a height of a first integer and a remainder times a track pitch of a metal track layer, and forming power rails within the metal track layer at boundaries of the cell accommodating for the remainder.
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