Invention Grant
US09147028B2 Forming modified cell architecture for finFET technology and resulting device
有权
形成用于finFET技术和结果器件的改进的电池架构
- Patent Title: Forming modified cell architecture for finFET technology and resulting device
- Patent Title (中): 形成用于finFET技术和结果器件的改进的电池架构
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Application No.: US13902395Application Date: 2013-05-24
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Publication No.: US09147028B2Publication Date: 2015-09-29
- Inventor: Mahbub Rashed , Lei Yuan
- Applicant: GLOBALFOUNDRIES INC.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES INC.
- Current Assignee: GLOBALFOUNDRIES INC.
- Current Assignee Address: KY Grand Cayman
- Agency: Ditthavong & Steiner, P.C.
- Main IPC: G06F17/50
- IPC: G06F17/50 ; H01L29/66 ; H01L29/78

Abstract:
Methods for accommodating a non-integer multiple of the M2 pitch for the cell height of a semiconductor cell and the resulting devices are disclosed. Embodiments may include forming a cell within an integrated circuit (IC) with a height of a first integer and a remainder times a track pitch of a metal track layer, and forming power rails within the metal track layer at boundaries of the cell accommodating for the remainder.
Public/Granted literature
- US20140346662A1 FORMING MODIFIED CELL ARCHITECTURE FOR FINFET TECHNOLOGY AND RESULTING DEVICE Public/Granted day:2014-11-27
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