Invention Grant
US09147438B2 Monolithic three dimensional (3D) integrated circuits (ICs) (3DICs) with vertical memory components, related systems and methods
有权
具有垂直存储器组件的单片三维(3D)集成电路(IC)(3DIC),相关系统和方法
- Patent Title: Monolithic three dimensional (3D) integrated circuits (ICs) (3DICs) with vertical memory components, related systems and methods
- Patent Title (中): 具有垂直存储器组件的单片三维(3D)集成电路(IC)(3DIC),相关系统和方法
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Application No.: US14152248Application Date: 2014-01-10
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Publication No.: US09147438B2Publication Date: 2015-09-29
- Inventor: Pratyush Kamal , Yang Du , Kambiz Samadi
- Applicant: QUALCOMM Incorporated
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM Incorporated
- Current Assignee: QUALCOMM Incorporated
- Current Assignee Address: US CA San Diego
- Agency: Withrow & Terranova, PLLC
- Main IPC: G11C17/00
- IPC: G11C17/00 ; G11C5/02 ; H04L12/933 ; H01L23/00 ; G06F1/32 ; H01L27/06

Abstract:
Monolithic three dimensional (3D) integrated circuits (ICs) (3DICs) with vertical memory components are disclosed. A 3D memory crossbar architecture with tight-pitched vertical monolithic intertier vias (MIVs) for inter-block routing and multiplexers at each tier for block access is used to shorten overall conductor length and reduce resistive-capacitive (RC) delay. Elimination of such long crossbars reduces the RC delay of the crossbar and generally improves performance and speed. Further, elimination of the long horizontal crossbars makes conductor routing easier. The MIVs, with their small run-length, can work without the need for repeaters (unlike the long crossbars), and control logic may be used to configure the memory banks based on use.
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