Invention Grant
- Patent Title: Semiconductor device having level shift circuit
- Patent Title (中): 具有电平移位电路的半导体器件
-
Application No.: US14317978Application Date: 2014-06-27
-
Publication No.: US09147446B2Publication Date: 2015-09-29
- Inventor: Kohei Nakamura
- Applicant: MICRON TECHNOLOGY, INC.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Dorsey & Whitney LLP
- Priority: JP2013-134496 20130627
- Main IPC: H03L5/00
- IPC: H03L5/00 ; G11C7/10 ; G11C5/14 ; G11C7/22 ; G11C11/4074 ; G11C11/4076 ; G11C11/4093

Abstract:
Disclosed herein is a device includes: a level conversion circuit coupled to first and third power supply lines, receiving a first signal and an inverted signal of the first signal each having an amplitude between first and second potentials, and outputting a second signal having an amplitude between first and third potentials; a delay circuit coupled to the first and second power supply lines, and outputting a third signal delayed from the first signal; and an output circuit including first and second transistors coupled in series between the first and third power supply lines, the first transistor having a control electrode supplied with the second signal, and the second transistor having a control electrode supplied with the third signal.
Public/Granted literature
- US20150002206A1 SEMICONDUCTOR DEVICE HAVING LEVEL SHIFT CIRCUIT Public/Granted day:2015-01-01
Information query