发明授权
- 专利标题： Hybrid bipolar junction transistor
- 专利标题（中）： 混合双极结晶体管
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申请号： US14184384申请日： 2014-02-19
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公开(公告)号： US09147715B2公开(公告)日： 2015-09-29
- 发明人: Ali Afzali-Ardakani , Bahman Hekmatshoartabari , Tak H. Ning , Davood Shahrjerdi
- 申请人： International Business Machines Corporation
- 申请人地址： US NY Armonk
- 专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址： US NY Armonk
- 代理机构： Otterstedt, Ellenbogen & Kammer, LLP
- 代理商 Louis J. Percello
- 主分类号： H01L35/24
- IPC分类号： H01L35/24 ; H01L27/32 ; H01L29/73
摘要：
Bipolar junction transistors including inorganic channels and organic emitter junctions are used in some applications for forming high resolution active matrix displays. Arrays of such bipolar junction transistors are electrically connected to thin film switching transistors and provide high drive currents for passive devices such as organic light emitting diodes.
公开/授权文献
- US20150236078A1 HYBRID BIPOLAR JUNCTION TRANSISTOR 公开/授权日：2015-08-20
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