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公开(公告)号：US10332983B1
公开(公告)日：2019-06-25
申请号：US15935468
申请日：2018-03-26
发明人： Kangguo Cheng , Choonghyun Lee , Juntao Li , Heng Wu , Peng Xu
IPC分类号： H01L29/66 , H01L29/06 , H01L29/78 , H01L21/225 , H01L21/02 , H01L29/423
摘要： Vertical field-effect transistors are fabricated while controlling gate length by causing enhanced oxidation of silicon germanium regions on parallel semiconductor fin channel regions. Oxidation of the silicon germanium region is accompanied by volume expansion and condensation. Shared or non-shared gate structures are formed on the sidewalls of the semiconductor fin channel regions. A dielectric liner may be incorporated with self-aligned oxide regions to form a composite spacer for providing electrical isolation of the top source/drain regions.
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公开(公告)号：USD851521S1
公开(公告)日：2019-06-18
申请号：US29609368
申请日：2017-06-29
申请人： Trakblaze Global
设计人： William Hartmann
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公开(公告)号：US10298678B2
公开(公告)日：2019-05-21
申请号：US14181770
申请日：2014-02-17
发明人： Paul C. Castro , Marco Pistoia , John Ponzo
摘要： A group of remote devices executing an omnichannel application are coordinated from a network node. An omnichannel mediator coordinates formation of at least two of said remote devices into an omnichannel cloudlet. A component manager controls which of a plurality of components of said omnichannel application should optimally be placed on which individual devices of said omnichannel cloudlet and how data should flow to individual devices of said omnichannel cloudlet. A replication optimizer optimally coordinates data replication for the group of remote device.
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公开(公告)号：US10269924B2
公开(公告)日：2019-04-23
申请号：US15462825
申请日：2017-03-18
发明人： Ravi K. Dasaka , Sebastian U. Engelmann , Nicholas C. M. Fuller , Masahiro Nakamura , Richard S. Wise
IPC分类号： H01L29/78 , H01L21/02 , H01L21/311 , H01L29/16 , H01L29/165 , H01L29/66 , H01L29/161
摘要： A silicon nitride cap on a gate stack is removed by etching with a fluorohydrocarbon-containing plasma subsequent to formation of source/drain regions without causing unacceptable damage to the gate stack or source/drain regions. A fluorohydrocarbon-containing polymer protection layer is selectively deposited on the regions that are not to be etched during the removal of the nitride cap. The ability to remove the silicon nitride material using gas chemistry, causing formation of a volatile etch product and protection layer, enables reduction of the ion energy to the etching threshold.
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公开(公告)号：US10256276B2
公开(公告)日：2019-04-09
申请号：US15333171
申请日：2016-10-24
IPC分类号： H01L51/05 , H01L51/10 , H01L27/28 , H01L29/08 , H01L27/12 , H01L29/778 , H01L29/66 , H01L27/32 , H05B33/08 , H05B37/02 , H01L29/40 , H01L29/43 , H01L29/786
摘要： Hybrid high electron mobility field-effect transistors including inorganic channels and organic gate barrier layers are used in some applications for forming high resolution active matrix displays. Arrays of such high electron mobility field-effect transistors are electrically connected to thin film switching transistors and provide high drive currents for passive devices such as organic light emitting diodes. The organic gate barrier layers are operative to suppress both electron and hole transport between the inorganic channel layer and the gate electrodes of the high electron mobility field-effect transistors.
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公开(公告)号：US10254122B2
公开(公告)日：2019-04-09
申请号：US15151921
申请日：2016-05-11
发明人： Tierra Bills , Reginald Bryant , David Kaguma , Michiaki Tatsubori , Aisha Walcott , John Mbari Wamburu
摘要： Herein is disclosed methods and systems for automated route analysis and recommendation of preferred routes. Recommended routes may be vehicle specific, and custom-selected based on historical data and weighting factors such as road roughness and traversal time.
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公开(公告)号：US10229986B1
公开(公告)日：2019-03-12
申请号：US15831354
申请日：2017-12-04
摘要： A vertical transport field-effect transistor includes a top source/drain region separated from an underlying gate stack by a multi-layer top spacer that includes an oxygen barrier layer beneath a top dielectric layer. Techniques for fabricating the transistor include depositing the oxygen barrier layer over the gate stack prior to depositing the top dielectric layer. The oxygen barrier layer blocks oxygen diffusion during deposition of the top dielectric layer, thereby avoiding damage to underlying interfacial and gate dielectric layers.
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8.发明授权公开(公告)号：US10223788B2
公开(公告)日：2019-03-05
申请号：US15442151
申请日：2017-02-24
摘要： A dermoscopic lesion area is identified by: Obtaining a dermoscopic image and running a convolutional neural network image classifier on the dermoscopic image to obtain pixelwise lesion prediction scores. Segmenting the dermoscopic image into super-pixels, and computing for each super-pixel an average of the pixelwise prediction scores for pixels within that super-pixel. Computing a mean prediction score across the plurality of super-pixels. Assigning a confidence indicator of “1” to each super-pixel with a prediction score equal or greater than the mean prediction score, and a confidence indicator of “0” to each super-pixel with a prediction score less than the mean prediction score. Constructing a super-pixel graph G=(V,E,W) wherein w ij = exp ( - x i - x j 2 σ ) and di=Σi=1Nwij; computing a confidence score function F according to {circumflex over (F)}=arg min(FTLF+μ∥F−Y∥2); and integrating the confidence score function F with the pixelwise prediction scores to produce a final segmentation of the dermoscopic image into lesion and background areas.
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公开(公告)号：US10217637B1
公开(公告)日：2019-02-26
申请号：US15709876
申请日：2017-09-20
发明人： Russell A. Budd , Qianwen Chen , Bing Dang , Jeffrey D. Gelorme , Li-wen Hung , John U. Knickerbocker
IPC分类号： H01L21/20 , B24B7/22 , H01L21/683 , H01L23/498
摘要： Small size chip handling and electronic component integration are accomplished using handle fixturing to transfer die or other electronic components from a full area array to a targeted array. Area array dicing of a thinned device wafer on a handle wafer/panel may be followed by selective or non-selective de-bonding of targeted die or electronic components from the handle wafer and optional attachment to a carrier such as a transfer head or tape. Alignment fiducials may facilitate precision alignment of the transfer head or tape to the device wafer and subsequently to the targeted array. Alternatively, the dies or other electronic elements are transferred selectively from either a carrier or the device wafer to the targeted array.
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公开(公告)号：US10217109B2
公开(公告)日：2019-02-26
申请号：US12833059
申请日：2010-07-09
申请人： Michael C. Ward , Patrik Smets , Paul Vanneste
发明人： Michael C. Ward , Patrik Smets , Paul Vanneste
摘要： At least a first cryptogram and a second cryptogram are transmitted from a payment device reader component to a terminal component. A message including at least the first cryptogram and the second cryptogram is transmitted from the terminal component to an issuer of a payment device presented to the reader component, through a payment network. A message is obtained from the issuer, corresponding to authentication, by the issuer, of the payment device (and optionally the owner of the payment device) presented to the reader component, based at least on the first cryptogram and the second cryptogram. The payment network is configured in accordance with at least one of (i) a standard, and (ii) a specification, which normally employs only a single cryptogram for the message and the authentication. Apparatuses and computer program products are also disclosed.
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