发明授权
US09153472B2 Device for depositing a layer on a semiconductor wafer by means of vapour deposition
有权
用于通过气相沉积在半导体晶片上沉积层的装置
- 专利标题： Device for depositing a layer on a semiconductor wafer by means of vapour deposition
- 专利标题（中）： 用于通过气相沉积在半导体晶片上沉积层的装置
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申请号： US14389944申请日： 2013-03-22
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公开(公告)号： US09153472B2公开(公告)日： 2015-10-06
- 发明人: Georg Brenninger
- 申请人： SILTRONIC AG
- 申请人地址： DE Munich
- 专利权人： Siltronic AG
- 当前专利权人： Siltronic AG
- 当前专利权人地址： DE Munich
- 代理机构： Brooks Kushman P.C.
- 优先权： DE102012205616 20120404
- 国际申请： PCT/EP2013/056011 WO 20130322
- 国际公布： WO2013/149849 WO 20131010
- 主分类号： C23C16/458
- IPC分类号： C23C16/458 ; H01L21/67 ; H01L21/687 ; C23C16/46 ; C23C16/455 ; H01L21/02 ; H01L21/20
摘要：
Uniformity of vapor deposited coatings on semiconductor wafers is improved by employing an apparatus having a gas distributor head below a susceptor onto which the wafer is placed, the gas distributor head directing a fan of cooling gas at the rear side of the susceptor. The ratio of the diameter of the cooled section of the susceptor to the diameter D of the wafer is preferably from 0.1 to 0.4.
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