Invention Grant
- Patent Title: Graphene sensor
- Patent Title (中): 石墨烯传感器
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Application No.: US13966427Application Date: 2013-08-14
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Publication No.: US09157887B2Publication Date: 2015-10-13
- Inventor: Dechao Guo , Shu-Jen Han , Chung-Hsun Lin , Ning Su
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Cantor Colburn LLP
- Agent Vazken Alexanian
- Main IPC: H01L29/786
- IPC: H01L29/786 ; H01L21/336 ; G01N27/414 ; H01L29/423 ; H01L29/49 ; H01L29/66 ; H01L29/16 ; H01L51/00

Abstract:
A method for forming a sensor includes forming a channel in substrate, forming a sacrificial layer in the channel, forming a sensor having a first dielectric layer disposed on the substrate, a graphene layer disposed on the first dielectric layer, and a second dielectric layer disposed on the graphene layer, a source region, a drain region, and a gate region, wherein the gate region is disposed on the sacrificial layer removing the sacrificial layer from the channel.
Public/Granted literature
- US20130328016A1 GRAPHENE SENSOR Public/Granted day:2013-12-12
Information query
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