Invention Grant
- Patent Title: Metrology method and apparatus, and device manufacturing method
- Patent Title (中): 计量方法和装置以及装置制造方法
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Application No.: US13628697Application Date: 2012-09-27
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Publication No.: US09158194B2Publication Date: 2015-10-13
- Inventor: Armand Eugene Albert Koolen , Henricus Petrus Maria Pellemans , Maurits Van Der Schaar , Peter Clement Paul Vanoppen , Michael Kubis
- Applicant: ASML Netherlands B.V.
- Applicant Address: NL Veldhoven
- Assignee: ASML Netherlands B.V.
- Current Assignee: ASML Netherlands B.V.
- Current Assignee Address: NL Veldhoven
- Agency: Sterne, Kessler, Goldstein & Fox P.L.L.C.
- Main IPC: G01B11/00
- IPC: G01B11/00 ; G01B11/14 ; G03B27/32 ; G03B27/54 ; G03B27/72 ; G03B27/74 ; G03C5/00 ; G03F1/42 ; G03F7/20 ; G03F9/00 ; G01N21/47 ; G01B9/04

Abstract:
An approach is used to estimate and correct the overlay variation as function of offset for each measurement. A target formed on a substrate includes periodic gratings. The substrate is illuminated with a circular spot on the substrate with a size larger than each grating. Radiation scattered by each grating is detected in a dark-field scatterometer to obtain measurement signals. The measurement signals are used to calculate overlay. The dependence (slope) of the overlay as a function of position in the illumination spot is determined. An estimated value of the overlay at a nominal position such as the illumination spot's center can be calculated, correcting for variation in the overlay as a function of the target's position in the illumination spot. This compensates for the effect of the position error in the wafer stage movement, and the resulting non-centered position of the target in the illumination spot.
Public/Granted literature
- US20130100427A1 Metrology Method and Apparatus, and Device Manufacturing Method Public/Granted day:2013-04-25
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