Invention Grant
- Patent Title: Semiconductor device and method of manufacturing semiconductor device
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US13781496Application Date: 2013-02-28
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Publication No.: US09159607B2Publication Date: 2015-10-13
- Inventor: Satoshi Uno , Hideaki Tsuchiya , Shinji Yokogawa
- Applicant: RENESAS ELECTRONICS CORPORATION
- Applicant Address: JP Tokyo
- Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: McDermott Will & Emery LLP
- Priority: JP2012-042806 20120229; JP2012-223966 20121009
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L21/768 ; H01L23/498 ; H01L23/00

Abstract:
A semiconductor chip SC includes an electrode pad PAD. A Cu pillar PIL is formed on the electrode pad PAD. In addition, an interconnect substrate INT includes a connection terminal TER. The connection terminal TER contains Cu. For example, the connection terminal TER is formed of Cu, and is formed, for example, in a land shape. However, the connection terminal TER may not be formed in a land shape. The Cu pillar PIL and the connection terminal TER are connected to each other through a solder layer SOL. The solder layer SOL contains Sn. A Ni layer NIL is formed on either the Cu pillar PIL or the connection terminal TER. The minimum value L of the thickness of the solder layer SOL is equal to or less than 20 μm.
Public/Granted literature
- US20130221520A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE Public/Granted day:2013-08-29
Information query
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