Invention Grant
- Patent Title: Infrared detector
- Patent Title (中): 红外探测器
-
Application No.: US14146820Application Date: 2014-01-03
-
Publication No.: US09163998B2Publication Date: 2015-10-20
- Inventor: Sung-hyun Nam , Hae-seok Park
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2013-0011979 20130201
- Main IPC: G01J5/20
- IPC: G01J5/20 ; G01J5/08 ; G01J5/02

Abstract:
An infrared detector may include a substrate, a resonant unit spaced apart from the substrate, the resonant unit configured to generate heat by inducing resonance at a plurality of wavelengths of incident infrared light, a thermistor layer configured to support the resonant unit and be spaced apart from the resonant unit, the thermistor layer having a resistance value that varies according to the heat generated in the resonant unit, and a connection unit configured to support the thermistor layer such that the thermistor layer is spaced apart from the substrate and electrically connect the thermistor layer to the substrate.
Public/Granted literature
- US20140217289A1 INFRARED DETECTOR Public/Granted day:2014-08-07
Information query