Invention Grant
- Patent Title: Semiconductor structure including a semiconductor-on-insulator region and a bulk region, and method for the formation thereof
- Patent Title (中): 包括绝缘体上半导体区域和体区的半导体结构及其形成方法
-
Application No.: US14579255Application Date: 2014-12-22
-
Publication No.: US09165840B2Publication Date: 2015-10-20
- Inventor: Stefan Flachowsky , Matthias Kessler , Jan Hoentschel
- Applicant: GLOBALFOUNDRIES Inc.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES Inc.
- Current Assignee: GLOBALFOUNDRIES Inc.
- Current Assignee Address: KY Grand Cayman
- Agency: Amerson Law Firm, PLLC
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L21/84 ; H01L21/02 ; H01L21/8238 ; H01L21/762 ; H01L29/66 ; H01L27/12 ; H01L27/06 ; H01L21/8234 ; H01L29/94 ; H01L27/088
Abstract:
A structure comprises a semiconductor substrate, a semiconductor-on-insulator region and a bulk region. The semiconductor-on-insulator region comprises a first semiconductor region, a dielectric layer provided between the semiconductor substrate and the first semiconductor region, and a first transistor comprising an active region provided in the first semiconductor region. The dielectric layer provides electrical isolation between the first semiconductor region and the semiconductor substrate. The bulk region comprises a second semiconductor region provided directly on the semiconductor substrate.
Public/Granted literature
Information query
IPC分类:
