Invention Grant
- Patent Title: Semiconductor device including coupling conductive pattern
- Patent Title (中): 半导体器件包括耦合导电图案
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Application No.: US13229193Application Date: 2011-09-09
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Publication No.: US09165893B2Publication Date: 2015-10-20
- Inventor: Yong-Hoon Kim , Jong-Joo Lee , Sang-Youb Lee , Young-Don Choi , Hee-Seok Lee
- Applicant: Yong-Hoon Kim , Jong-Joo Lee , Sang-Youb Lee , Young-Don Choi , Hee-Seok Lee
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Myers Bigel Sibley & Sajovec, P.A.
- Priority: KR10-2010-0090095 20100914
- Main IPC: H04B5/00
- IPC: H04B5/00 ; H01L23/64 ; H01L25/10 ; H01L23/00

Abstract:
A semiconductor device is disclosed including a through electrode. The semiconductor device may include a first semiconductor chip including a transceiver circuit formed on a first surface, a first coupling conductive pattern which is formed on a second surface opposite the first surface, and a through electrode which connects the transceiver circuit and the first coupling conductive pattern. There may be a transceiver located on a second semiconductor chip and including a second coupling conductive pattern facing the first coupling conductive pattern which communicates wirelessly with the first coupling conductive pattern.
Public/Granted literature
- US20120064827A1 SEMICONDUCTOR DEVICE INCLUDING COUPLING CONDUCTIVE PATTERN Public/Granted day:2012-03-15
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