Invention Grant
US09166156B2 Memory cells, methods of forming memory cells and methods of forming memory arrays
有权
存储单元,形成存储单元的方法和形成存储器阵列的方法
- Patent Title: Memory cells, methods of forming memory cells and methods of forming memory arrays
- Patent Title (中): 存储单元,形成存储单元的方法和形成存储器阵列的方法
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Application No.: US14251421Application Date: 2014-04-11
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Publication No.: US09166156B2Publication Date: 2015-10-20
- Inventor: Jun Liu , John K. Zahurak
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Wells St. John P.S.
- Main IPC: H01L29/02
- IPC: H01L29/02 ; H01L45/00 ; H01L27/24

Abstract:
Some embodiments include memory cells which have multiple programmable material structures between a pair of electrodes. One of the programmable material structures has a first edge, and another of the programmable material structures has a second edge that contacts the first edge. Some embodiments include methods of forming an array of memory cells. First programmable material segments are formed over bottom electrodes. The first programmable material segments extend along a first axis. Lines of second programmable material are formed over the first programmable material segments, and are formed to extend along a second axis that intersects the first axis. The second programmable material lines have lower surfaces that contact upper surfaces of the first programmable material segments. Top electrode lines are formed over the second programmable material lines.
Public/Granted literature
- US20140217352A1 Memory Cells, Methods of Forming Memory Cells and Methods of Forming Memory Arrays Public/Granted day:2014-08-07
Information query
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