A phase change memory cell and a method for fabricating the phase change memory cell. The phase change memory cell includes a bottom electrode and a first non-conductive layer. The first non-conductive layer defines a first well, a first electrically conductive liner lines the first well, and the first well is filled with a phase change material in the phase change memory cell. A second non-conductive layer is deposited above the first non-conductive layer. A second well is defined by the second non-conductive layer and positioned directly above the first well. A second electrically conductive liner lines at least one wall of the second well such that the second electrically conductive liner is not in physical contact with the first electrically conductive liner. Furthermore, the phase change material is deposited in the second well.