发明授权
US09170488B2 Resist pattern-forming method, and radiation-sensitive resin composition
有权
抗蚀剂图案形成方法和辐射敏感树脂组合物
- 专利标题: Resist pattern-forming method, and radiation-sensitive resin composition
- 专利标题(中): 抗蚀剂图案形成方法和辐射敏感树脂组合物
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申请号: US14307296申请日: 2014-06-17
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公开(公告)号: US09170488B2公开(公告)日: 2015-10-27
- 发明人: Hirokazu Sakakibara , Taiichi Furukawa , Reiko Kimura , Masafumi Hori
- 申请人: JSR CORPORATION
- 申请人地址: JP Tokyo
- 专利权人: JSR CORPORATION
- 当前专利权人: JSR CORPORATION
- 当前专利权人地址: JP Tokyo
- 代理机构: Oblon, McClelland, Maier & Neustadt, L.L.P.
- 优先权: JP2010-233027 20101015; JP2011-066669 20110324
- 主分类号: G03F7/26
- IPC分类号: G03F7/26 ; G03F7/004 ; G03F7/038 ; G03F7/039 ; G03F7/20 ; G03F7/32
摘要:
A resist pattern-forming method includes coating a radiation-sensitive resin composition on a substrate to provide a resist film. The resist film is exposed. The exposed resist film is developed using a developer solution including no less than 80% by mass of an organic solvent. The radiation-sensitive resin composition includes a polymer, a radiation-sensitive acid generator, and an acid diffusion controller which includes a compound having an amide group. The polymer has a weight average molecular weight in terms of the polystyrene equivalent of greater than 6,000 and includes a first structural unit that includes an acid-labile group. The polymer includes less than 5 mol % or 0 mol % of a second structural unit that includes a hydroxyl group.
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