发明授权
- 专利标题: Cold field emission cathode using carbon nanotubes
- 专利标题(中): 使用碳纳米管的冷场发射阴极
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申请号: US13994015申请日: 2011-04-14
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公开(公告)号: US09171688B2公开(公告)日: 2015-10-27
- 发明人: Sandeep Venkit Anand , Arvind Krishnaswamy , Debiprosad Roy Mahapatra
- 申请人: Sandeep Venkit Anand , Arvind Krishnaswamy , Debiprosad Roy Mahapatra
- 申请人地址: IN
- 专利权人: Indian Institute of Science
- 当前专利权人: Indian Institute of Science
- 当前专利权人地址: IN
- 代理机构: Moritt Hock & Hamroff LLP
- 代理商 Steven S. Rubin, Esq.
- 优先权: IN353/CHE/2011 20110207
- 国际申请: PCT/IB2011/051618 WO 20110414
- 国际公布: WO2012/107804 WO 20120816
- 主分类号: H01J1/14
- IPC分类号: H01J1/14 ; H01J19/06 ; H01K1/04 ; H01J1/304 ; H01J9/02 ; B82Y99/00
摘要:
Devices for use in cold-field emission and methods of forming the device are generally presented. In one example, a method may include providing a conductive base, dispersing carbon-filled acrylic onto the conductive base to form a conductive film, coupling a copper plate to a first side of the conductive film, and irradiating the conductive film. The method may further include dispersing carbon nanotubes (CNTs) on a second side of the conductive film to form a substantially uniform layer of CNTs, removing excess CNTs from the second side, and curing the conductive film. In one example, a device may include a polycarbonate base, a layer of carbon-filled acrylic on one side of the polycarbonate base and a layer of irradiated carbon-filled acrylic on the other, a copper plate coupled to the carbon-filled acrylic, and a substantially uniform layer of randomly aligned CNTs dispersed on the irradiated carbon-filled acrylic.
公开/授权文献
- US20130264936A1 COLD FIELD EMISSION CATHODE USING CARBON NANOTUBES 公开/授权日:2013-10-10
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