A method includes providing a semiconductor structure. The semiconductor structure includes a substrate having a frontside and a backside, an electrically conductive feature including copper provided at the frontside of the substrate and a low-k interlayer dielectric provided over the electrically conductive feature. A portion of the interlayer dielectric is etched. In the etch process, a surface of the electrically conductive feature is exposed. A degas process is performed, wherein the semiconductor structure is exposed to a first gas, and wherein the semiconductor structure is heated from the backside and from the frontside. A preclean process may be performed. The preclean process may include a first phase wherein the semiconductor structure is exposed to a substantially non-ionized second gas and a second phase wherein the semiconductor structure is exposed to a plasma created from the second gas.