Invention Grant
- Patent Title: Method of manufacturing semiconductor device including thermal compression
- Patent Title (中): 制造包括热压缩的半导体器件的方法
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Application No.: US14095000Application Date: 2013-12-03
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Publication No.: US09171820B2Publication Date: 2015-10-27
- Inventor: Kil Yong Lee , Jae Sun Han , Jong Hyuk Eun
- Applicant: Kil Yong Lee , Jae Sun Han , Jong Hyuk Eun
- Applicant Address: KR Gumi-si, Gyeongsangbuk-do
- Assignee: CHEIL INDUSTRIES, INC.
- Current Assignee: CHEIL INDUSTRIES, INC.
- Current Assignee Address: KR Gumi-si, Gyeongsangbuk-do
- Agency: Lee & Morse, P.C.
- Priority: KR10-2012-0150675 20121221
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L23/00 ; H05K3/36 ; G02F1/1345 ; H05K3/32
Abstract:
A method of manufacturing a semiconductor device includes attaching a curable film to a first connection member including a first circuit terminal, attaching a conductive film to a second connection member including a second circuit terminal, and thermally compressing the first connection member to the second connection member, with the first connection member and the second connection member placed such that the curable film and the conductive film face each other.
Public/Granted literature
- US20140179065A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE Public/Granted day:2014-06-26
Information query
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