A highly reliable semiconductor device in which a shift in the threshold voltage of a transistor due to deterioration is prevented is provided. The semiconductor device is formed using a sequential circuit including: a first transistor controlling the electrical connection between a first wiring and a second wiring; a second transistor and a third transistor in each of which a source and a drain are electrically connected to each other and which control the electrical connection between the second wiring and a third wiring; and a switch group controlling the electrical connection between a gate of the first transistor and the third wiring or a fourth wiring, the electrical connection between a gate of the second transistor and the third wiring or the fourth wiring, and the electrical connection between a gate of the third transistor and the third wiring or the fourth wiring in response to a control signal.