Invention Grant
- Patent Title: Magnetic tunnel junction device with perpendicular magnetization and method of fabricating the same
- Patent Title (中): 具有垂直磁化的磁隧道结器件及其制造方法
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Application No.: US14181736Application Date: 2014-02-17
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Publication No.: US09172032B2Publication Date: 2015-10-27
- Inventor: Kuei-Hung Shen , Shan-Yi Yang , Yung-Hung Wang
- Applicant: Industrial Technology Research Institute
- Applicant Address: TW Hsinchu
- Assignee: Industrial Technology Research Institute
- Current Assignee: Industrial Technology Research Institute
- Current Assignee Address: TW Hsinchu
- Agency: Jianq Chyun IP Office
- Priority: TW102119972A 20130605; TW102137939A 20131021
- Main IPC: H01L43/10
- IPC: H01L43/10 ; H01L43/12
Abstract:
A magnetic tunnel junction device with perpendicular magnetization including a reference layer, a tunneling dielectric layer, a free layer and a capping layer is provided. The tunneling dielectric layer covers on the reference layer. The free layer covers on the tunneling dielectric layer. The capping layer is consisted of magnesium, aluminum and oxygen, and disposed on the free layer.
Public/Granted literature
- US20140361391A1 MAGNETIC TUNNEL JUNCTION DEVICE WITH PERPENDICULAR MAGNETIZATION AND METHOD OF FABRICATING THE SAME Public/Granted day:2014-12-11
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