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公开(公告)号：US09231191B2
公开(公告)日：2016-01-05
申请号：US13901412
申请日：2013-05-23
Applicant: Industrial Technology Research Institute
Inventor： Sheng-Huang Huang , Kuei-Hung Shen , Yung-Hung Wang
CPC classification number: H01L43/02 , G01R33/091 , G01R33/098 , G11B5/3909 , G11C11/15 , H01L43/08 , H01L43/12
Abstract: A magnetic tunnel junction (MTJ) device includes a reference layer having a surface, a tunnel insulating layer formed over the surface of the reference layer, a free layer formed over the tunnel insulating layer, and a magnetic field providing layer formed over the free layer. A magnetization direction in each of the reference layer and the free layer is substantially perpendicular to the surface. The magnetic field providing layer is configured to provide a lateral magnetic field in the free layer, the lateral magnetic field being substantially parallel to the surface.
Abstract translation: 磁隧道结（MTJ）装置包括具有表面的参考层，形成在参考层的表面上的隧道绝缘层，形成在隧道绝缘层上的自由层和形成在自由层上的磁场提供层 。 每个参考层和自由层中的磁化方向基本上垂直于表面。 磁场提供层被配置为在自由层中提供横向磁场，横向磁场基本上平行于表面。
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Patent Agency Ranking
公开(公告)号：US09207290B2
公开(公告)日：2015-12-08
申请号：US13730534
申请日：2012-12-28
Applicant: Industrial Technology Research Institute
Inventor： Keng-Ming Kuo , Ding-Yeong Wang , Yung-Hung Wang
CPC classification number: G01R33/06 , G01R33/098 , G11B3/00 , H01L21/00 , H01L2221/00
Abstract: A magnetic field sensor for sensing an external magnetic field is disclosed. The magnetic field sensor includes at least two magnetic tunneling junction (MTJ) elements disposed on an underlying electrode. Each of the MTJ elements is formed by a synthetic antiferromagnetic layer, a barrier layer and a free layer sequentially stacked together. A top electrode is then connected to the free layers. The free layer can be a single free layer, a composite free layer, a synthetic antiferromagnetic free layer or an alloy free layer. When a current is applied to a metal circuit passing over or below the MTJ elements, free magnetic moments generated by the MTJ elements are anti-parallel to each other along a reference axis, and the angles between the magnetic moments created by the MTJ elements and the reference axis are 40 to 50 degrees and 130 to 140 degrees, respectively.
Abstract translation: 公开了一种用于感测外部磁场的磁场传感器。 磁场传感器包括设置在底层电极上的至少两个磁性隧道结（MTJ）元件。 每个MTJ元件由顺序堆叠在一起的合成反铁磁层，阻挡层和自由层形成。 然后将顶部电极连接到自由层。 自由层可以是单个自由层，复合自由层，合成反铁磁自由层或合金自由层。 当电流施加到通过MTJ元件上方或下方的金属电路时，由MTJ元件产生的自由磁矩沿着参考轴线彼此反平行，并且由MTJ元件产生的磁矩之间的角度 参考轴分别为40至50度和130至140度。
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3.发明授权公开(公告)号：US09172032B2
公开(公告)日：2015-10-27
申请号：US14181736
申请日：2014-02-17
Applicant: Industrial Technology Research Institute
Inventor： Kuei-Hung Shen , Shan-Yi Yang , Yung-Hung Wang
Abstract: A magnetic tunnel junction device with perpendicular magnetization including a reference layer, a tunneling dielectric layer, a free layer and a capping layer is provided. The tunneling dielectric layer covers on the reference layer. The free layer covers on the tunneling dielectric layer. The capping layer is consisted of magnesium, aluminum and oxygen, and disposed on the free layer.
Abstract translation: 提供了具有包括参考层，隧道介电层，自由层和覆盖层的垂直磁化的磁性隧道结装置。 隧道介电层覆盖在参考层上。 自由层覆盖在隧道介电层上。 封盖层由镁，铝和氧组成，并设置在自由层上。
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公开(公告)号：US20140048895A1
公开(公告)日：2014-02-20
申请号：US13839394
申请日：2013-03-15
Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
Inventor： Sheng-Huang Huang , Kuei-Hung Shen , Yung-Hung Wang
Abstract: A magnetic tunnel junction (MTJ) device includes a reference layer having a surface, a tunnel insulating layer formed over the surface of the reference layer, and a free layer formed over the tunnel insulating layer. A magnetization direction in each of the reference layer and the free layer is substantially perpendicular to the surface. A dimension of the reference layer in a horizontal direction substantially parallel to the surface is larger than a dimension of the free layer in the horizontal direction.
Abstract translation: 磁性隧道结（MTJ）器件包括具有表面的参考层，形成在参考层的表面上的隧道绝缘层，以及形成在隧道绝缘层上的自由层。 每个参考层和自由层中的磁化方向基本上垂直于表面。 大致平行于表面的水平方向上的参考层的尺寸大于自由层在水平方向上的尺寸。
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5.发明申请MAGNETIC TUNNEL JUNCTION DEVICE WITH PERPENDICULAR MAGNETIZATION AND METHOD OF FABRICATING THE SAME 有权具有全面磁化的磁性隧道连接装置及其制造方法公开(公告)号：US20140361391A1
公开(公告)日：2014-12-11
申请号：US14181736
申请日：2014-02-17
Applicant: Industrial Technology Research Institute
Inventor： Kuei-Hung Shen , Shan-Yi Yang , Yung-Hung Wang
Abstract: A magnetic tunnel junction device with perpendicular magnetization including a reference layer, a tunneling dielectric layer, a free layer and a capping layer is provided. The tunneling dielectric layer covers on the reference layer. The free layer covers on the tunneling dielectric layer. The capping layer is consisted of magnesium, aluminum and oxygen, and disposed on the free layer.
Abstract translation: 提供了具有包括参考层，隧道介电层，自由层和覆盖层的垂直磁化的磁性隧道结装置。 隧道介电层覆盖在参考层上。 自由层覆盖在隧道介电层上。 封盖层由镁，铝和氧组成，并设置在自由层上。
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公开(公告)号：US20140048896A1
公开(公告)日：2014-02-20
申请号：US13901412
申请日：2013-05-23
Applicant: Industrial Technology Research Institute
Inventor： Sheng-Huang Huang , Kuei-Hung Shen , Yung-Hung Wang
CPC classification number: H01L43/02 , G01R33/091 , G01R33/098 , G11B5/3909 , G11C11/15 , H01L43/08 , H01L43/12
Abstract: A magnetic tunnel junction (MTJ) device includes a reference layer having a surface, a tunnel insulating layer formed over the surface of the reference layer, a free layer formed over the tunnel insulating layer, and a magnetic field providing layer formed over the free layer. A magnetization direction in each of the reference layer and the free layer is substantially perpendicular to the surface. The magnetic field providing layer is configured to provide a lateral magnetic field in the free layer, the lateral magnetic field being substantially parallel to the surface.
Abstract translation: 磁隧道结（MTJ）装置包括具有表面的参考层，形成在参考层的表面上的隧道绝缘层，形成在隧道绝缘层上的自由层和形成在自由层上的磁场提供层 。 每个参考层和自由层中的磁化方向基本上垂直于表面。 磁场提供层被配置为在自由层中提供横向磁场，横向磁场基本上平行于表面。
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