Invention Grant
- Patent Title: High side gate driver, switching chip, and power device
- Patent Title (中): 高边栅极驱动器,开关芯片和功率器件
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Application No.: US13688484Application Date: 2012-11-29
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Publication No.: US09172356B2Publication Date: 2015-10-27
- Inventor: Hyun-sik Choi , Ho-jung Kim , Jai-kwang Shin , U-in Chung
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2012-0035598 20120405
- Main IPC: H03B1/00
- IPC: H03B1/00 ; H03K3/00 ; G05F3/02 ; H03K17/06

Abstract:
A high side gate driver, a switching chip, and a power device, which respectively include a protection device, are provided. The high side gate driver includes a first terminal configured to receive a first low level driving power supply that is provided to turn off the high side normally-on switch; a first switching device connected to the first terminal; and a protection device connected in series between the first switching device and a gate of the high side normally-on switch, the protection device configured to absorb a majority of a voltage applied to a gate of the high side normally-on switch. The power device includes the high side gate driver. In addition, the switching chip includes a high side normally-on switch, an additional normally-on switch, and a low side normally-on switch, which have a same structure.
Public/Granted literature
- US20130265028A1 HIGH SIDE GATE DRIVER, SWITCHING CHIP, AND POWER DEVICE Public/Granted day:2013-10-10
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