Invention Grant
US09177802B2 High tilt angle plus twist drain extension implant for CHC lifetime improvement
有权
高倾斜角加捻线延长植入物,用于CHC寿命改善
- Patent Title: High tilt angle plus twist drain extension implant for CHC lifetime improvement
- Patent Title (中): 高倾斜角加捻线延长植入物,用于CHC寿命改善
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Application No.: US14142251Application Date: 2013-12-27
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Publication No.: US09177802B2Publication Date: 2015-11-03
- Inventor: Xiang-Zheng Bo , Alwin Tsao , Douglas T. Grider
- Applicant: Texas Instruments Incorporated
- Applicant Address: US TX Dallas
- Assignee: TEXAS INSTRUMENTS INCORPORATED
- Current Assignee: TEXAS INSTRUMENTS INCORPORATED
- Current Assignee Address: US TX Dallas
- Agent Jacqueline J. Garner; Frank D. Cimino
- Main IPC: H01L21/336
- IPC: H01L21/336 ; H01L21/266 ; H01L21/8234 ; H01L21/265 ; H01L29/66

Abstract:
An integrated circuit containing an analog MOS transistor may be formed by implanting drain extensions with exactly four sub-implants wherein at least one sub-implant implants dopants in a substrate of the integrated circuit at a source/drain gate edge of the analog MOS transistor at a twist angle having a magnitude of 5 degrees to 40 degrees with respect to the source/drain gate edge of the analog MOS transistor, for each source/drain gate edge of the analog MOS transistor, wherein a zero twist angle sub-implant is perpendicular to the source/drain gate edge. No more than two sub-implants put the dopants in the substrate at any source/drain gate edge of the analog MOS transistor. All four sub-implants are performed at a same tilt angle. No halo implants are performed on the analog MOS transistor.
Public/Granted literature
- US20140187008A1 HIGH TILT ANGLE PLUS TWIST DRAIN EXTENSION IMPLANT FOR CHC LIFETIME IMPROVEMENT Public/Granted day:2014-07-03
Information query
IPC分类: