Invention Grant
- Patent Title: Through-substrate via shielding
- Patent Title (中): 通过屏蔽通过基板
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Application No.: US14519731Application Date: 2014-10-21
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Publication No.: US09177923B2Publication Date: 2015-11-03
- Inventor: Daeik Kim , Chandrasekharan Kothandaraman , Chung-Hsun Lin , John M. Safran
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Cantor Colburn LLP
- Agent Yuanmin Cai
- Main IPC: H01L21/44
- IPC: H01L21/44 ; H01L23/04 ; H01L23/58 ; H01L21/768 ; H01L23/48 ; H01L23/498 ; H01L23/00
Abstract:
A semiconductor apparatus includes a substrate structure including a silicon substrate layer, a conductive through-substrate via extending through the silicon substrate layer. The apparatus further includes a semiconductor device located in the substrate structure and a conductive wall located between the through-substrate via and the semiconductor device. The conductive wall is in electrical contact with the silicon substrate layer.
Public/Granted literature
- US20150035589A1 THROUGH-SUBSTRATE VIA SHIELDING Public/Granted day:2015-02-05
Information query
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