发明授权
- 专利标题： Semiconductor device
- 专利标题（中）： 半导体器件
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申请号： US13855781申请日： 2013-04-03
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公开(公告)号： US09177954B2公开(公告)日： 2015-11-03
- 发明人: Tomomitsu Risaki
- 申请人： Seiko Instruments Inc.
- 申请人地址： JP
- 专利权人： SEIKO INSTRUMENTS INC.
- 当前专利权人： SEIKO INSTRUMENTS INC.
- 当前专利权人地址： JP
- 代理机构： Adams & Wilks
- 优先权： JP2012-094089 20120417
- 主分类号： H01L29/02
- IPC分类号： H01L29/02 ; H01L27/06 ; H01L29/861 ; H01L29/06
摘要：
A semiconductor device has a semiconductor substrate and a breakdown voltage adjusting first conductivity type low concentration region provided on the semiconductor substrate. A second conductivity type high concentration region is provided near a surface within the breakdown voltage adjusting first conductivity type low concentration region so as to be surrounded by the first conductivity type low concentration region but not surrounded by any low concentration region other than the first conductivity type low concentration region. A first conductivity type high concentration region is provided on the surface within the breakdown voltage adjusting first conductivity type low concentration region without being held in contact with the second conductivity type high concentration region.
公开/授权文献
- US20130277792A1 SEMICONDUCTOR DEVICE 公开/授权日：2013-10-24
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