Invention Grant
US09177996B2 Method for forming ReRAM chips operating at low operating temperatures
有权
用于形成在低工作温度下工作的ReRAM芯片的方法
- Patent Title: Method for forming ReRAM chips operating at low operating temperatures
- Patent Title (中): 用于形成在低工作温度下工作的ReRAM芯片的方法
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Application No.: US14072611Application Date: 2013-11-05
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Publication No.: US09177996B2Publication Date: 2015-11-03
- Inventor: Dipankar Pramanik , Tony P. Chiang
- Applicant: Intermolecular, Inc.
- Applicant Address: US CA San Jose
- Assignee: Intermolecular, Inc.
- Current Assignee: Intermolecular, Inc.
- Current Assignee Address: US CA San Jose
- Main IPC: H01L27/24
- IPC: H01L27/24 ; H01L45/00 ; H01L21/66 ; G11C13/00 ; H01L21/02 ; H01L21/283 ; H01L21/324 ; H01L49/02
Abstract:
Forming a resistive memory structure at a temperature well above the operating temperature can reduce the forming voltage and create a defect distribution with higher stability and lower programming voltages. The forming temperature can be up to 200 C above the operating temperature. The memory chip can include an embedded heater in the chip package, allowing for a chip forming process after packaging.
Public/Granted literature
- US20140273300A1 Method for Forming ReRAM Chips Operating at Low Operating Temperatures Public/Granted day:2014-09-18
Information query
IPC分类:
