Invention Grant
US09178006B2 Methods to improve electrical performance of ZrO2 based high-K dielectric materials for DRAM applications
有权
改善用于DRAM应用的ZrO2基高K电介质材料的电性能的方法
- Patent Title: Methods to improve electrical performance of ZrO2 based high-K dielectric materials for DRAM applications
- Patent Title (中): 改善用于DRAM应用的ZrO2基高K电介质材料的电性能的方法
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Application No.: US14177118Application Date: 2014-02-10
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Publication No.: US09178006B2Publication Date: 2015-11-03
- Inventor: Xiangxin Rui , Hanhong Chen , Naonori Fujiwara , Imran Hashim , Kenichi Koyanagi
- Applicant: Intermolecular, Inc. , Elpida Memory, Inc.
- Applicant Address: US CA San Jose JP Tokyo
- Assignee: Intermolecular, Inc.,Elpida Memory, Inc.
- Current Assignee: Intermolecular, Inc.,Elpida Memory, Inc.
- Current Assignee Address: US CA San Jose JP Tokyo
- Main IPC: H01L49/02
- IPC: H01L49/02 ; H01L27/108 ; H01G4/10
Abstract:
A method for reducing the leakage current in DRAM MIM capacitors comprises forming a multi-layer dielectric stack from an amorphous highly doped material, an amorphous high band gap material, and a lightly-doped or non-doped material. The highly doped material will remain amorphous (
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