Invention Grant
- Patent Title: Deposition of anisotropic dielectric layers orientationally matched to the physically separated substrate
- Patent Title (中): 各向异性介电层的沉积与物理分离的衬底取向匹配
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Application No.: US14137003Application Date: 2013-12-20
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Publication No.: US09178011B2Publication Date: 2015-11-03
- Inventor: Sergey Barabash , Dipankar Pramanik
- Applicant: Intermolecular, Inc.
- Applicant Address: US CA San Jose
- Assignee: Intermolecular, Inc.
- Current Assignee: Intermolecular, Inc.
- Current Assignee Address: US CA San Jose
- Main IPC: H01L49/02
- IPC: H01L49/02 ; H01L21/28 ; H01L27/108 ; H01L21/02
Abstract:
A dielectric layer can achieve a crystallography orientation similar to a base dielectric layer with a conductive layer disposed between the two dielectric layers. By providing a conductive layer having similar crystal structure and lattice parameters with the base dielectric layer, the crystallography orientation can be carried from the base dielectric layer, across the conductive layer to affect the dielectric layer. The process can be used to form capacitor structure for anisotropic dielectric materials, along the direction of high dielectric constant.
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