Invention Grant
- Patent Title: Thin film transistor substrate and method for manufacturing the same and organic light emitting device using the same
- Patent Title (中): 薄膜晶体管基板及其制造方法及使用其的有机发光装置
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Application No.: US14546912Application Date: 2014-11-18
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Publication No.: US09178048B2Publication Date: 2015-11-03
- Inventor: Jong Sik Shim , Woo Jin Nam , Hong Jae Shin , Min Kyu Chang
- Applicant: LG Display Co., Ltd.
- Applicant Address: KR Seoul
- Assignee: LG Display Co., Ltd.
- Current Assignee: LG Display Co., Ltd.
- Current Assignee Address: KR Seoul
- Agency: Fenwick & West LLP
- Priority: KR10-2012-0088565 20120813
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L29/66 ; H01L29/786 ; H01L51/50 ; H01L29/417

Abstract:
Disclosed is a thin film transistor substrate which facilitates to improve output and transfer characteristics of thin film transistor, wherein the thin film transistor substrate comprises a thin film transistor comprising a lower gate electrode on a substrate, an active layer on the lower gate electrode, source and drain electrodes on the active layer, and an upper gate electrode on the source electrode, drain electrode and active layer, the upper gate electrode for covering a channel region defined by the source and drain electrodes; and a contact portion for electrically connecting the lower gate electrode with the upper gate electrode.
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